In Situ Simulation by RHEED of GaAs (001) ß2(2x4) Reconstructed Surface

The GaAs (001) surface is one of the most studied semiconductor surfaces and has attracted much interest of both experimentalists and theoreticians because of its importance for the growth of multilayer devices structures Several techniques have been introduced to characterize GaAs MBE growth such as Reflection high energy electron diffraction ( RHEED). RHEED is a well known and widely used techniques for monitoring the growth conditions of an epitaxial layer. It is in situ non destructive method to obtain structural and morphological information during the crystal growth. In the growth, the main information provided by the analysis of the RHEED pattern are the surface reconstructions and the growth rate. The aim of this paper is to study the early stage of homoepitaxial growth on a GaAs(001) ß
₂
(2×4) reconstructed surface. A kinetic Monte Carlo simulations is used the GaAs surface is characterized by RHEED oscillation with consideration of the effect of some growth parameters such as the substrate temperature and both Ga and As2 fluxes.