Investigation of the drain current shift in ZnO thin film transistors

The combinational properties of ZnO of hardness to visible light, transparency, low temperature deposition, high mobility, and the ability to crystallize on almost any substrate enables ZnO thin film transistors (TFTs) to be promising low-cost optoelectronic devices for the next generation of invisible and flexible electronics, such as switches for addressing active matrices based on organic light-emitting diodes. Using high-K dielectrics in ZnO TFTs substantially increases its transconductance, g
_m
. Using barium strontium titanate (BST) may result in the increase of g
_m
by more than 200 times it value if SiO
₂
is used.