Three-color photodetector based on quantum dots and resonant-tunneling diodes coupled with conductive polymers

Recently a new photodetector design based on quantum dots and resonant-tunneling diode (QDRTD) was proposed by Shields et al. which demonstrated high detection efficiency and a resolution to the single photon level. Different from the avalanche photo diode (APD) based photodetector, the detection mechanism of this device is to sense the change of the resonant tunneling current across the double barrier quantum well (DBQW) caused by the capture of photon-generated holes by a layer of self-assembled quantum dots (QDs) adjacent to the quantum well.