Designing bulk-driven MOSFETs in scaled technologies

This paper has presented simulation results which show that delta doping is capable of significantly improving g
_mb
(and thus, the intrinsic gain) in a BD MOSFET for channel lengths common to modern processes. Results also showed that the oxide thickness typically required for GD operation can be relaxed in a BD MOSFET; QM effects were then shown to degrade gmb less aggressively than g
_m
.