Analytical modeling of the gate tunneling leakage for the determination of adequate high-K dielectrics in 22 nm double-gate SOI MOSFETs

In this paper the gate leakage current in metal-oxide-semiconductor (MOS) is studied in order to find promising materials for the 22 nm node in double gate MOSFETs by considering simple and improved analytical models of the direct tunneling current by using proper WKB tunneling probability through gate oxide. Finding a suitable gate stack is a big challenge for MOSFETs manufacturing. In order to reduce the gate leakage current, high-K gate dielectrics are expected to replace SiO
2
in future CMOS generations. Introducing a physically thicker high-K material can reduce the leakage current to the acceptable limit. We present a theoretical study to find the most promising gate oxide materials for the 22 nm technological node with the predicted maximum value of leakage current (10
^-2
[A/cm
²
]) that is tolerable for that node according to the ITRS roadmap. The effects of electron effective mass, dielectric constant K-value and barrier height on the -K borders, choosing proper dielectric materials, have been studied.