Surface-potential-based compact model of dynamically depleted SOI MOSFETs

PSP-based compact model of dynamically depleted SOI MOSFETs has been developed and verified using TCAD simulations. This development adopts the symmetric linearization method to the dynamically depleted SOI operation while retaining the highly developed description of the small geometry effects in the PSP models. The model has been implemented in circuit simulators, benchmarked and tested for convergence.