Super-high-frequency two-port AlN contour-mode resonators for RF applications

This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, k
_t

²
, in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.