An innovative mathematical model of RF-induced quiescent point shift in a BJT

This paper describes the bipolar junction transistor (BJT) behavior under radio frequency (RF) injection in its base lead. Comparative results between a computer model and measured data over the range 5-1000 MHz are presented. In this work, various bias networks with different base bias resistors and various levels of injected power were taken into account. A new method to calculate the model electrical parameters is shown, without the direct knowledge of physical parameters such as doping profiles and geometrical dimensions of the junctions. For modeling purposes, a two-section hybrid /spl pi/ model was used in conjunction with a Fourier expansion of the rectification response. A good agreement was found between the measured data and model data.