A 1.2V 57mW mobile ISDB-T SoC in 90nm CMOS

This paper presents a 1.2 V 57 mW SoC using a 90 nm CMOS process in mobile ISDB-T application. This achieves -98.5 dBm sensitivity at QPSK, CR = -2/3 with 2.5 dB NF of RF tuner block and 5.6 dB C/N of OFDM block at UHF-band. To integrate RF tuner and OFDM in a small single die, a wideband single LC-VCO operating from 1.8 GHz to 3.3 GHz is proposed and OFDM is designed by hard-wired logic.