Experimental influence of the base load effect on SiGe/Si and InGaAs/InP HPTs

Heterojunction bipolar phototransistors (HPTs) This paper presents an experimental direct validation of the opto-microwave matching properties of heterojunction bipolar phototransistors (HPTs) for the first time. Thus, it provides a direct validation of the associated theory and confirms that HPT require a special process to their base matching as it differs dramatically from conventional complex conjugate matching. This experimental study is undertaken up to 10 GHz on SiGe/Si phototransistors at 850 nm and on InGaAs/InP phototransistors at 1550 nm, with both the HPTs integrated in conventional HBT technologies for greater integration with electronic circuits.