Design and fabrication of monolithic integrated optical array sensor and characterization of its single chip

Monolithic integrated optical array sensor is designed and fabricated. This array sensor is composed of vertical-cavity surface-emitting laser (VCSEL) and resonant cavity enhanced (RCE) photodiode. After the single chip is packaged, VCSEL and RCE photodiode are characterized independently. The VCSEL's optical power of 0.3 mW is achieved at 30 mA with peak wavelength of 781 nm. The full width at half-maximum (FWHM) of 1 nm is achieved at 30 mA. The RCE photodiode's responsivity of 0.92A/W is achieved at 780 nm.