Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects

This paper presents analytical modeling and parametric study of the voltage dependent metal-oxide-semiconductor (MOS) capacitance of annular and co-axial TSVs. 3D electromagnetic (EM) simulations of TSVs are performed considering the depletion region. A low loss TSV structure is proposed utilizing the MOS capacitance effect.