GHz FBAR and SAW resonators manufactured ON GaN/Si

This paper presents the manufacturing and the microwave characterization of FBAR and SAW type resonators on GaN thin films grown on a high resistivity (111) oriented silicon subnstrste. The resonators have been manufactured using advanced micromachining technologies (for the FBAR structures)and nanolithographic techniques (for the IDT of the SAW structure). FBAR structures working at frequencies higher then 5 GHz have been obtained. For the SAW type structures a resonance at 4.8 GHz has been obtained for 250 nm fingers series connection of the SAWs, and 7.1 GHz for 100-150 nm fingers face to face SAW structures.