Complementary Thin-Film Electronics Based on n-Channel ZnO and p-Channel ZnTe

In this letter, we report on the fabrication of ZnO and ZnTe thin-film transistors (TFTs) on SiO
₂
/Si substrates in a bottom-gate configuration. The ZnO TFT devices exhibit field effect mobility of mu ~ 4 cm
²
/V middot s and an on/off current ratio exceeding 10
⁹
. The on/off-current ratio of the ZnTe devices was found to be 100, limited by the off current. Incorporation of the ZnTe and ZnO TFTs in a complementary logic circuit demonstrates inverter behavior with a high output voltage of V
_OH
> 14 V and low output voltage of V
_OL
< 0.2 V for a supply voltage of 15 V. The small signal gain for the transfer characteristic is found to be dV
_out
/ dV
_in
= -5 at V
_in
= 6 V.