Impact of FinFET technology on 6T-SRAM performance

The area penalty, operation stability, and operation speed of the 20-nm-ZG FinFET SRAM were compared to those of the 20-nm-ZG bulk-planar SRAM. The FinFET SRAM with beta-ratio of 1 is expected to realize not only 7% less area penalty, but also the same or superior operational stability to that of the bulk-planar SRAM with beta-ratio of 2 because of less variability of the device performance. Also, it is expected that the operation speed of the FinFET SRAM is twice faster than that of the bulk planar SRAM.