A high-speed H-Bridge circuit based on GaN HFETs and custom resonant gate drivers

The paper describes a high-speed high efficiency H-bridge circuit based upon Gallium nitride (GaN) Heterostructure Field-Effect Transistor (HFET) devices as power switches. The use of a new designed driver integrated circuit (IC) makes it possible to exploit the capabilities and advantages of GaN technology in power electronic applications by means of a smart and convenient implementation. Low power losses small size and high reliability are the main advantages of which the design of power systems can benefit. A full discussion of the design and of the experimental results of a DC to AC H-bridge inverter concludes the paper.