V-Band Amplifier MMICs Using Multi-Finger InP/GaAsSb DHBT Technology

We report on the development of a multi-finger InP/GaAsSb DHBT technology, optimized for the fabrication of RF MMICs. Geometry (number of fingers) and structure optimization has allowed to get F
_T
~200 GHz and F
_MAX
>300 GHz, to suit microwave applications. Special attention has been paid to critical thermal behavior. Key devices have been modeled using a modified Gummel-Poon model. Based on these models, and a passive devices library, RF amplifiers have been designed to operate at 60 GHz, fabricated using the developed process, using 2-finger devices, and measured. 1-stage amplifier delivers 5.5 dB, and 2-device 2-stage amplifier achieves up to 10 dB gain.