Temperature dependences of RF small-signal characteristics for the SOI dynamic threshold voltage MOSFET

In this paper, the temperature dependences of RF small-signal characteristics for the SOI dynamic threshold voltage (DT) MOSFET (-25 to 125degC) are examined under different bias points. The temperature effects on the intrinsic small-signal parameters and body-related parasitics are also investigated. Moreover, along with our proposed expressions for the cut-off and maximum oscillation frequencies (f
_t
and f
_max
), the impact of these intrinsic parameters and parasitics on the temperature behaviors of the DT MOSFET's RF performance can be well captured and described.