A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-µm CMOS process

A 24-GHz single-pole double-throw (SPDT) transmit/receive switch fabricated in the 0.18-mum CMOS process is presented. The T/R switch is designed to improve the isolation and power handling capability by shunt inductor resonance and body-floating techniques. On-wafer measurement of the switch is performed. The 24-GHz switch exhibits the return losses at all ports of higher than 14 dB, insertion loss of 6 dB, isolation between transmitter and receiver of 32.2 dB, input 1-dB compression point (P
_1dB
) of 21.5 dBm, and input third-order intercept point (IIP3) of 32.6 dBm. This is a successful demonstration of high isolation and high power handling capability CMOS T/R switch at 24 GHz.