A 29 dBm CMOS class-E power amplifier with 63% PAE using negative capacitance

This paper proposes class-E power amplifier including negative capacitance to optimize shunt drain capacitance. The negative capacitance improves efficiency, compensates for surplus shunt drain capacitance resulting from parasitic capacitance, and is implemented without an external circuit. A cascode single-ended class-E RF power amplifier including driver stage is fabricated using a 0.13-mum standard CMOS technology delivering 29 dBm with 66% drain efficiency and 63% power-added efficiency at 1.8 GHz.