Performances of MOS-Gated GTO in high voltage power applications

In this paper we present a comparative study between the characteristics of the MOS-Gated GTO, a new power semiconductor device, and the IGBT having the same n
^-
n
⁺
p
⁺
vertical structure. The blocking voltage of the analyzed devices ranges between 1.2 kV and 4.5 kV. Simulation results show that the MOS-GTO exhibits a much better trade-off between on state and switching characteristics than the IGBT particularly in the range of the high blocking voltages. The excellent performances of the MOS-GTO make it a very promising device for high voltage power applications.