Modelling of a symmetrical bipolar monolithic bidirectional switch

The purpose of this paper is to introduce a new concept of symmetrical power bipolar junction transistor for appliances applications with low forward voltage (< 1 V). Design and static simulations are discussed as well as the potential electrical impact of silicon hydrophobic direct wafer bonding used to realize such a device. Simulations results, for a nominal current of 5 A and a breakdown voltage of 500 V, are compared with existent solutions.