Hole mobility in InP and GaSb

Results are reported on an experimental and theoretical study of the temperature dependence of hole mobility in nominally undoped p-type GaSb and in Zn-doped p-type InP bulk crystals in the temperature range from 77 to 300 K. In both materials space charge scattering and/or dipole scattering described with a mobility contribution with a ~T-
^1/2
like temperature dependence dominated the hole mobility in the investigated temperature range.