Diode-based tuned ESD protection for 5.25-GHz CMOS LNAs

CMOS diodes are evaluated in terms of figure-of-merit (I
_t2
/C) and quality factor. Five 5.25-GHz LNAs with ESD protection are designed and tested; all have high ESD protection levels. The LNA protected with a one-diode variant of the cancellation circuit has RF performance almost identical to that of a sixth, unprotected LNA.