ESD evaluation of the emerging MuGFET technology

ESD characteristics of fully depleted (FD) FinFET devices are presented and compared to planar structures manufactured in the same multiple-gate FET (MuGFET) technology. FinFET-type MOS devices in breakdown mode are found to show an unprecedented sensitivity to ESD stress, while planar devices and FinFET gated diodes perform reasonably and with I-V characteristics beneficial for ESD protection.