The electron field emission from the Si nanostructures formed by laser irradiation

Silicon electron field emitters may be attractive for numerous applications, mostly due to their compatibility with the dominating Si-based solid state microand nanoelectronics. The technology of nanostructure formation through a laser radiation (LR) on Si surface for the electron field emitter is proposed. N-type Si wafers are used in the experiments. The experiments were performed in an ambient atmosphere at 1 atm. pressure, at a room temperature T=20degC with a humidity of 80%. Radiation from a pulsed Nd:YAG laser second harmonica (pulse duration 10 ns; wavelength 532 nm; power 1MW) was normally directed at the Si surface. The spot of a laser beam of 3 mm in diameter was scanned over the sample surface. In the experiment Electronic scanning microscope, Atomic force microscope and Electronic field emission facility were used. In this particular experiment nanometer size cone-like nanostructures were created on the surface as a result of laser irradiation. Cone-like structures with nanosphere on top of the cone formed after the irradiation by the laser. A decrease in the nanosphere diameter from 600 nm to20 nn with an increase of intensity of LP from 2.0MW/cm
²
to 20.0 MW/cm
²
was observed.