SOI-specific hot-hole induced degradation in PD and FD transistors

Hot carrier related degradation and reliability of SOI devices has assumed recently increased importance. The purpose of this paper is to report two new effects in SOI MOSFETs, and the results of a detailed study of the substrate current. The first effect relates to recent reports claiming that during front gate electron injection stress, the degradation of the back channel is negligible. The second effect relates to the nature of the generation mechanisms of interface states during hot hole injection.