Numerical simulation of SiC GTO thyristor using finite element analysis

A change of technology from Si to SiC will revolutionize the power electronics. In this paper, the switching simulation, 4H-SiC GTO thyristor is presented and tested numerically by predicting its performance using the 2-D simulator developed in this project. We calculate turn-off time and loss of SiC GTO thyristor using 2-dimensional device simulation.