Influence of submicron LDD-MOSFET charge effect on low power circuits

This model includes additional charge effects around the threshold voltage as well as a bias dependent charge description of the LDD(S)-region. If not taken into account in submicron MOSFET models, simulation errors of e.g. up to 50% in the frequency of 0.3 /spl mu/m CMOS ring oscillators or over 90% in the 3 dB frequency of a folded cascode amplifier may occur.