Suppression of geometric component of charge-pumping current in SOI/MOSFETs

Charge-pumping current in SOI/MOSFETs tends to have a very large geometric component which makes the data analysis very difficult, and thus the technique is not widely adopted for SOI despite its ability to probe both interfaces in small devices. We have systematically analyzed the nature of this parasitic effect, and this paper will introduce a simple method to improve the majority carrier response and effectively suppress this geometric component.