Development of highly reliable Al-Si-Pd alloy interconnections for VLSI

An Al-Si-Pd alloy developed to improve the reliability of VLSI interconnections is discussed. Dry etching characteristics of the Al-Si-Pd alloy in submicrometer patterning proved to be much better than those of the Al-Si-Cu alloy used previously. Both electro- and stress-induced migration resistances of the Al-Si-Pd alloy were at least at the same level as those of the Al-Si-Cu alloy. Long-term reliability tests of resin-molded 1.3- mu m-process MOS devices using an Al-Si-Pd alloy interconnection gave satisfactory results.<
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