The 90 nm Double-DICE storage element to reduce Single-Event upsets

In this paper, we introduce the double-DICE storage element, which reduces charge sharing and collecting between the sensitive nodes of sensitive pairs in a dual interlocked cell (DICE) storage cell in 90 nm technology. Interleaving two DICE storage cells in layout separates sensitive nodes by 8.5 mum, which is well beyond the minimum required of 5 mum shown in an earlier work. This reduces the probability of charge collecting in a sensitive pair in one DICE caused by a single-event strike. An area savings of 33.3 % results as compared to the case where no interleaving is used with the same nodal separation.