Reliability behavior of TaAlOx Metal-Insulator-Metal capacitors

Reliability characteristics of TaAlO
_x
high-k dielectric MIM capacitors are reported. TaAlO
_x
films have been deposited by RF co-sputtering of Ta
₂
O
₅
and Al
₂
O
₃
targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have been achieved. Degradation kinetics in TaAlO
_x
-based MIM capacitors have been studied under constant current stressing (CCS: 20 to 60 nA) and constant voltage stressing (CVS: 3 to 7 V). A dielectric breakdown voltage in the range of ~ 4.2 - 5.4 MV/cm was found for TaAlO
_x
films.