A SCR-buried BJT device for robust ESD protection with high latchup immunity in high-voltage technology

An SCR-buried BJT with a high holding voltage is developed for ESD protection in a 0.6 µm high voltage 10V process. This device simply consists of a floating P
⁺
diffusion buried in a parasitic NPN BJT. A robust 6∼7KV ESD threshold and high-latchup-immune 15∼18V holding voltage can be achieved by layout optimization of the anode-to-floating- P
⁺
-diffusion spacing and this P
⁺
diffusion width.