Dielectric characterization of CVD diamond thin films

The dielectric properties of diamond films deposited by CVD techniques onto p- and n-type silicon substrates have been measured in the frequency range from 0.1 to 10/sup 3/ KHz, at different temperatures. The interpretation of the data has been made on the basis of the many body theory of Dissado and Hill (1980) for the dielectric relaxation in solids. The parameters n and m calculated from this analysis have been correlated with the structure and content of the carbon phases in the films.