Selective Growth of the Silicon-Oxide Nanodot Array Using Nanosphere Lithography and Liquid-Phase Deposition

In this paper, we demonstrated that a well-ordered array of silicon oxide dots with diameter of 50-60 nm can be easily formed at low temperature using a newly developed technique. Specifically, silicon oxide dots were selectively deposited at temperatures of 50°C or less using a liquid-phase deposition (LPD) technique on the Si/Pt/Au substrates, which have a well-ordered array of nanoholes formed by photoresist ashing of the self-organized polystyrene bead and the deposition/liftoff of metal films (i.e., Pt/Au). Since the Si layer was exposed only at the bottom of nanoholes and silicon oxide was selectively deposited only on Si during the LPD process, silicon oxide was deposited in the form of a dot array in nanometer scale.