GSMBE growth of InGaAsP with an "on site" arsine generator

A prototype electrochemical arsine generator fitted with a special hydrogen separation stage has been demonstrated for the first time to solve the medium/long term arsine concentration stability problem experienced previously. The ability to stabilize the arsine concentration at a value higher than 99.5% has been proven by the reproducible growth of lattice matched InGaAsP and compressively strained InGaAsP MQW layers. The quality of the InP/InGaAsP layers grown with electrochemically generated arsine has been demonstrated to be comparable to the same layers grown with pure cylinder arsine. Such a hydride generator is particularly well adapted to GSMBE because of the low hydride consumption and because the growth chemistry being unchanged, the generator is directly compatible with existing calibrations and processes.