High-spatial-resolution characterization of residual strain in commercial LEC-grown InP(100) wafers

By using a high-spatial-resolution scanning infrared polariscope, in-plane components of residual strain have been characterized quantitatively in 2"/spl phi/ LEC-grown Fe-doped InP (100) wafers. Their two-dimensional distribution maps reveal characteristic fine structures such as slip-like patterns originated from crystallographic glides during the crystal growth process, and highly-strained spots and filaments due to inclusions or voids inside the wafer, or due to scratches on the surface. Solidification factor dependence of residual strain is also examined together with etch pit density and resistivity.