1.3 /spl mu/m GaInAsP/InP square buried heterostructure vertical cavity surface emitting laser grown by all MOCVD

In order to improve a buried heterostructure (BH) for GaInAsP/InP vertical cavity surface emitting laser (VCSEL) regrown by MOCVD, we have introduced a square mesa top pattern, of which side was at angle of 450 to <011> direction. A 1 /spl mu/m GaInAsP/InP square buried heterostructure (SBH) VCSEL with this mesa structure has been demonstrated and low threshold CW oscillation (threshold current I/sub th/=0.45 mA) at 77 K and low threshold room temperature pulsed oscillation (I/sub th/=12 mA) were obtained.