Reduction of inelastic scattering effect by introducing strain-compensated superlattice into GaInAs/GaInP multi-quantum barriers

The effect of inelastic scattering on the electron reflection in multi-quantum barriers has been examined for the first time by using the damped resonant tunneling model. The electron reflectivity deteriorates below unity most significantly at discrete energies in the virtual barrier. The largest dip in reflectivity is about 15% for intraband relaxation time of 0.16 ps. It is also shown that this deterioration can be reduced by utilizing strain-compensated superlattice in the multi-quantum barriers.