Multi-wavelength DFB laser arrays grown by in-plane thickness control epitaxy

Describes a new method to control the on-wafer lasing wavelength of DFB laser diodes. Oscillation wavelength is controlled on the same epitaxial wafer by using modulated growth thicknesses of selectively grown InGaAs/InGaAsP/InP MQW active waveguides. A five-wavelength MQW-DFB laser array with constant-pitch built-in corrugation demonstrated a controllable lasing wavelength range of 10.1 nm with uniform lasing characteristics. The technique is successfully applied to on-wafer wavelength control of modulator-integrated DFB lasers, which also makes this technique attractive for light sources used in long-haul WDM systems.