A high-gain high-linearity distributed amplifier for ultra-wideband-applications using a low cost SiGe BiCMOS technology

In this paper the analysis, design and characterization of a 1-15 GHz power distributed amplifier for ultra-wideband radar and sensing applications are presented. The amplifier is fabricated in a low cost 0.25 mum SiGe BiCMOS technology with a transit frequency f
_t
of 25 GHz. The circuit integrates four cascode gain cells, which are capacitively coupled to the base line for power optimization and bandwidth enhancement. Up to 16.9 dBm output power have been measured at the 1 dB compression point (P1 dB) in the desired frequency range with an associated gain of 11.5 dB and a gain flatness of plusmn1 dB with total power consumption of 450 mW. The maximum third order intermodulation intercept point (OIP3) is 21.5 dBm. The chip size of the amplifier is 1.19mm
²
.