Temperature effect on the heavy-ion induced Single-Event Transients propagation on a CMOS Bulk 0.18 µm inverters chain

In this paper, a study by device simulation of the heavy-ion induced Single-Event Transients (SET) is realized in the 218-418 K range in order to determine the temperature effect on a CMOS bulk 0.18 mum inverter. An investigation of the SET propagation though a 10-inverters logic chain is performed, and the threshold LET (LETth) required for unattenuated propagation through the inverters chain is determined. The LETth is calculated for two different location of the heavy ion impact and for three temperatures. An increase of the sensitivity is found when the temperature raise from 218 to 418 K.