Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs

A continuous analytical model for radiation-induced degradation in fully-depleted (FD) silicon on insulator (SOI) n-channel MOSFETs is presented. The combined effects of defect buildup in the buried oxide and band-to-band tunneling (BBT) have been shown to be the primary mechanisms that determine the radiation effects on the electrical characteristics. Closed-form expressions for the front and back-gate surface potential incorporate these effects, thereby enabling accurate modeling of the degraded current voltage characteristics that result from ionizing radiation exposure.