Single-Event Upsets in Photoreceivers for Multi-Gb/s Data Transmission

A Single-Event Upset study has been carried out on p-i-n photodiodes from a range of manufacturers. A total of 22 devices of 11 types from six vendors were exposed to a beam of 63 MeV protons. The angle of incidence of the proton beam was varied between normal and grazing incidence for three data rates (1.5, 2.0 and 2.5 Gb/s).