Low voltage (Vdd∼0.6 V) SRAM operation achieved by reduced threshold voltage variability in SOTB (silicon on thin BOX)

We have successfully demonstrated ldquosilicon on thin BOXrdquo (SOTB) 6T-SRAM with a 50-nm gate. By employing an ultra low-dose channel, this SOTB achieves small V
_th
variability. As a result, the SOTB SRAM technology has been successfully developed with 0.142 V of static noise margin at V
_dd
=0.6 V and V
_{dd_min}
of 0.63 V because of its excellent V
_th
variability characteristics. We also show that SOTB CMOS exhibits superior reliability and noise performance. These characteristics indicate robust properties for future industrial high performance and low power LSIs.