Phase-locked 1.3 µm VCSEL arrays based on patterned tunnel junction

Vertical cavity surface emitting lasers (VCSEL) are already used in many applications thanks to their unique device characteristics, particularly compact size, low power consumption, accurate wavelength setting, circular beams and on-wafer testing. The main disadvantage of VCSELs as compared to edge emitting lasers is the relatively low single mode output power (a few milliwatts) limited by their small active area. To overcome this limitation, phase-locked arrays of short wavelength (≪ 1 µm) VCSELs have been investigated using different fabrication approaches [1]. Here, we report the fabrication and lasing characteristics of phase-locked 1300 nm wavelength VCSEL arrays made using double wafer fusion.