Preliminary study on polycrystalline diamond films suitable for radiation detection

The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH
4
in H
2
) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 µm thick having different grain size. Dark current-voltage (I–V) measurements and impedance characterization have been found to be dependent on the grain size and on the quality of the examined samples.