InGaN light-emitting diodes with the strained AlGaN/InGaN multiple quantum barriers

In this article, we propose to use the strained Al
_0.03
Ga
_0.97
N/In
_0.01
Ga
_0.99
N superlattice as the quantum barrier of the InGaN LEDs. The advantage of doing this could be thought of relieving the biaxial strain for the normal InGaN/AlGaN MQWs, and improving the crystalline quality. Experimentally, high-resolution X-ray diffraction (HRXRD) was used to clarify the structural properties of the as-grown samples. As a result, the crystalline quality of the proposed LEDs does not degrade even incorporated an AlGaN into the barrier layer. For the LEDs with a strained-layer superlattice (SLS) quantum barrier, the observed PL intensity at 300 K becomes intense together with a blue shift of the emission peak that may be attributed to the alleviation of quantum-confined Stark effect (QCSE) as evaluated from the biased PL analysis.