A stable backgated-type SnO22 nanowires field emitter for mass production

In this paper we report the fabrication and testing of backgated triode structure field emission (FED) devices with SnO
2
-nanowires-based cathodes. Field-emission measurement reveals that the SnO
2
-nanowires FED devices posses a good emission property with low turn-on voltage (∼150 V), high emission current (∼ 390 µA) and long-term emission stability.